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Research Article Open Access

Optimization of the SiC powder source size distribution for the sublimation growth of long crystal boules   



Matthias Arzig1, TaChing Hsiao2, Peter J. Wellmann1*



1Crystal Growth Lab, Materials Department 6 (imeet), University of Erlangen-Nürnberg (FAU), Martensstr. 7, 91058 Erlangen, Germany.

2Industrial Technology Research Institute of Taiwan (ITRI), 195, Sec 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan

Adv. Mater. Proc., 2018, 3 (9), 540-543

DOI: 10.5185/amp.2018/1414

Publication Date (Web):05 November 2018

Copyright © IAAM-VBRI Press



In this work we studied the influence of three different SiC powder size distributions and the sublimation behavior during physical vapor transport growth of SiC in a 3 inch crystal processing configuration. The evolution of the source material as well as of the crystal growth interface was carried out using in‐site X‐ray computed tomography. Two SiC powders exhibited a single modal D90 size distribution of ca. 50 μm and ca. 200 μm, respectively. In both cases the average SiC powder density was 1.2 g/cm3. The third powder was a mixture of the above mentioned source materials and exhibited a bimodal particle size distribution. The corresponding average SiC powder density was 1.7 g/cm3. In this latter case the in‐itu X‐ray computed tomography study revealed an improved growth interface stability that enabled a much longer crystal growth process. During process time, the sublimation‐recrystallization behavior of the mixed SiC powder showed a much smoother morphology change and slower materials consumption as well as much more stable shape of the growth interface than in the case of the less dense SiC source. By adapting the size distribution of the SiC source material we achieved to significantly enhance stable growth conditions. Copyright © 2018 VBRI Press.


Silicon carbide, physical vapor transport, source material, in-situ visualization, computed tomography.