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Research Article Open Access

Performance analysis of different material based dual electrode doping-less TFET

Sunny Anand*, S. Inthekhab Amin, R.K. Sarin

Department of Electronics and communication Engineering, Dr. B. R. Ambedkar National Institute of Technology Jalandhar, Punjab, India

Adv. Mater. Proc., 2017, 2 (6), 384-387

DOI: 10.5185/amp.2017/607

Publication Date (Web):05 June 2017

Copyright © IAAM-VBRI Press



In this work, the charge plasma based dual electrode doping-less tunnel FETs (DEDLTFET) is simulated with the use of different materials such as silicon (Si-DEDLTFET), Silicon-germanium (SiGe-DEDLTFET) and SiGe at Source (SiGe Source DEDLTFET). The charge plasma technique is used to create source and drain region on an intrinsic body by selecting appropriate work function of metal electrode. The paper provides the comparison among devices on the basis of RF parameters. The on-state current (ION) for SiGe source DEDLTFET, SiGe-DEDLTFET and DEDLTFET are 1.84x10-4, 8.75x10-5 and 8.11x10-6 A/µm respectively for similar off-state current (IOFF). This result show that SiGe source DEDLTFET device provides better drive current along with improved ON-OFF current ratio (ION/IOFF) and subthreshold slope (SS). Improved transconductance (gm) and cut-off frequency (fT) show that the hetero-material device has better RF performance while comparing with the other two devices. Copyright © 2017 VBRI Press.


Charge plasma, band to band tunnelling (BTBT), sige hetero device, doping-less TFET (DLTFET).