Cover Page October-2016-Advanced Materials Letters

Advanced Materials Letters

Volume 7, Issue 10, Pages 821-825, October 2016
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Thickness Effect On Nano-multilayered Sb/As2S3 Chalcogenide Thin Films

Ramakanta Naik*

Department of Physics, Utkal University, Bhubaneswar 751004, India

Adv. Mater. Lett., 2016, 7 (10), pp 821-825

DOI: 10.5185/amlett.2016.6339

Publication Date (Web): Aug 01, 2016

E-mail:ramakanta.naik@gmail.com

Abstract

The nano multilayered thin films of Sb/As2S3 metal chalcogenide were prepared by thermal evaporation technique under high vacuum. The optical parameters such as optical band gap, tauc parameter, urbach energy were determined from the transmission spectra using Fourier Transform Infrared Spectroscopy. These properties are greatly influenced by the thickness of the nano layered Sb/As2S3 thin film. The Small Angle X-ray diffraction study reveals the amorphous nature of these films. The analysis reveals that the optical band gap decreases with increase in thickness due to Sb metal. The tauc parameter and urbach energy supports the optical property change. Such type of dependence is attributed to quantum size effect in semiconductors.

Keywords

Chalcogenides, thin film, EDAX, FTIR, optical properties.

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