Charge carrier generation in a polymer by using n-type doping for the improvement of electrical prop Charge carrier generation in a polymer by using n-type doping for the improvement of electrical prop
1Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad 211002, India
2Physics for Energy Division, National Physical Laboratory (Council of Scienti?c and Industrial Research), Dr. K. S. Krishnan Harvesting Road, New Delhi 110012, India
3Department of Physics, Banaras Hindu University, Varanasi 221005, India
Adv. Mater. Lett., 2016, 7 (5), pp 414-418
Publication Date (Web): Apr 04, 2016
Copyright © IAAM-VBRI Press
In this paper, the charge carrier generation in polymer blends by chemical doping has studied. In these studies, we employed n-type dopant molecule decamethylcobaltocene (DMC) which exhibit very strong electron donating nature. We have demonstrated that such type of doping favours the formation of charge transfer complex (CTC) and reduce the recombination probability. We have confirmed the CTC formation form the absorption spectroscopy. Further we have used transient photoluminescence spectroscopy to reveal the reduced initial recombination of charge transfer exciton. We interpret our results based on a reduced formation of emissive charge transfer excitons in doped blends, induced by state filling of immobile tail states in the polymer HOMO.
Conjugated polymers, n-type doping, charge transfer complex.