Growth And Field Emission Properties Of Vertically-aligned ZnO Nanowire Array On Biaxially Textured Ni-W Substrate By Thermal Evaporation

Deepak Chhikara, K. M. K. Srivatsa*, M. Senthil Kumar, Preetam Singh, Sourav Das, O. S. Panwar

Physics of Energy Harvesting Division, Council of Scientific & Industrial Research (CSIR) - National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi-110012, India

Adv. Mater. Lett., 2015, 6 (10), pp 862-866

DOI: 10.5185/amlett.2015.5886

Publication Date (Web): Sep 18, 2015

E-mail: kmk_srivatsa@mail.nplindia.org

Abstract


Vertically well aligned and highly dense ZnO nanowires (NWs) have been grown on biaxially textured Ni substrates by a simple thermal evaporation technique over a large area without using any catalyst. The grown ZnO NWs have crystallized in wurtzite hexagonal structure and have grown along [0001] direction. It is also observed that the degree of vertical alignment of NWs increases with increasing growth temperature. An intense photoluminescence peak at 383 nm with a negligible deep band emission revealed the good crystalline quality of ZnO NWs. Field emission properties of the grown NWs have been examined and a field enhancement factor of 1573 has been obtained, indicating the suitability of grown nanowires for field emission applications.

Keywords

ZnO Nanowires, thermal evaporation, Raman spectrum, field emission.

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