Growth and field emission properties of vertically-aligned ZnO nanowire array on biaxially textured Growth and field emission properties of vertically-aligned ZnO nanowire array on biaxially textured
Physics of Energy Harvesting Division, Council of Scientific & Industrial Research (CSIR) - National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi-110012, India
Adv. Mater. Lett., 2015, 6 (10), pp 862-866
Publication Date (Web): Sep 18, 2015
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Vertically well aligned and highly dense ZnO nanowires (NWs) have been grown on biaxially textured Ni substrates by a simple thermal evaporation technique over a large area without using any catalyst. The grown ZnO NWs have crystallized in wurtzite hexagonal structure and have grown along  direction. It is also observed that the degree of vertical alignment of NWs increases with increasing growth temperature. An intense photoluminescence peak at 383 nm with a negligible deep band emission revealed the good crystalline quality of ZnO NWs. Field emission properties of the grown NWs have been examined and a field enhancement factor of 1573 has been obtained, indicating the suitability of grown nanowires for field emission applications.
ZnO Nanowires, thermal evaporation, Raman spectrum, field emission.