Simulation study of influence of Al, Si and B on the growth of TiC Simulation study of influence of Al, Si and B on the growth of TiC

Simulation study of influence of Al, Si and B on the growth of TiC

Haimin Ding*, Kaiyu Chu, Jinfeng Wang

Department of Mechanical Engineering, North China Electric Power University, Baoding 071003, PR China

Adv. Mater. Lett., 2011, 2 (6), pp 425-428

DOI: 10.5185/amlett.2011.2230

Publication Date (Web): Apr 08, 2012

E-mail: dinghaimin@yahoo.cn

Abstract


The influence of Al, Si and B on the growth of TiC is studied in this article. It is found that the adsorption of Al is more favorable on TiC {111} than that on {001}. Therefore, under the influence of it, the growth rate of {111} will be accelerated and result in the decreasing of the relative growth rate between {001} and {111}. Therefore, TiC will grow into truncated-octahedron. But when TiC is formed under the influence of Si and B, they will grow into hexagonal platelets due to the preferential adsorption of Si and B on {011} and {001}.

Keywords

Ceramics, simulation and modeling, crystal growth

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