Department of Materials Science and Engineering, University of Utah, 122 S. Central Campus Drive, Salt Lake City, Utah, 84112, USA
Adv. Mater. Lett., 2014, 5 (5), pp 242-247
DOI: 10.5185/amlett.2014.amwc1032
Publication Date (Web): Mar 09, 2014
Copyright © IAAM-VBRI Press
E-mail: tiwari@eng.utah.edu
In this article we have reviewed the role of oxides in spintronics research, and specifically how these materials stand to further improve the efficiencies and capabilities of spin injection for active spintronic device development. The use of oxides in spintronics is advantageous in that they are stable in air, can be easily modified, and can possess a wide variety of properties which are beneficial to spintronics applications. This paper delineates the progression of spintronics and shows how applying oxide systems, in the form of half-metallic LaSrMnO3, the diluted magnetic semiconductor ZnO:Co, and diluted magnetic dielectrics CeO2:Co and Sm2O3:Co, has influenced and improved spintronics capabilities. An outline of the future potential for oxides in the realm of organic spintronic devices is also given
Spintronics, diluted magnetic semiconductors, diluted magnetic dielectric, ferromagnetism
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