Effect Of Electron Beam Irradiation On Photoluminescence Properties Of Thioglycolic Acid (TGA) Capped CdTe Nanoparticles

Chethan Pai S1, M. P. Joshi2*, S Raj Mohan2, T. S. Dhami2, Jayakrishna Khatei3, K S Koteshwar Rao3, L. M. Kukreja2, Ganesh Sanjeev1

1Microtron Centre, Department of Studies in Physics, Mangalore University, Mangalagangotri, India

2Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore, India

3Department of Physics, Indian Institute of Science, Bangalore, India

Adv. Mater. Lett., 2013, Ion Beam Special Issue, 4 (6), pp 454-457

DOI: 10.5185/amlett.2012.ib.113

Publication Date (Web): Mar 16, 2013

E-mail: mukesh@rrcat.gov.in

Abstract


Irradiation effects of 8 MeV electrons on photoluminescence properties of thioglycolic acid (TGA) capped CdTe quantum Dots (QD) are presented. Steady-state and time-resolved photoluminescence (PL) spectroscopy were used for anlayzing PL properties of both irradiated and unirradiated quantum dots. The Photoluminescence peak, intensity and lifetimes were found to vary with dose. At lower doses (up to 5kGy), they were found increasing and at higher doses (up to 20kGy) it decreased. The PL peak position also shifted toward low energy and broadened with increase of dose. Initial increase in PL intensity (upto 5kGy) is due to passivation of surface defects leading to high radiative recombination. At higher doses the damage of capping layer takes place leading to aggregation effects.

Keywords

Nanoparticles, electron beam irradiation, photoluminescence, CdTe/CdS core/shell structure.

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