Azimuthal Angle Dependence Of Nanoripple Formation On Si(100) By Low Energy Ion Erosion

Sarathlal K. V., Satish Potdar, Mohan Gangrade, V. Ganesan, Ajay Gupta*

UGC- DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore, India, 452017

Adv. Mater. Lett., 2013, Ion Beam Special Issue, 4 (6), pp 398-401

DOI: 10.5185/amlett.2012.ib.102

Publication Date (Web): Mar 16, 2013

E-mail: agupta@csr.res.in

Abstract


Generation of self organized nanoripple patterns on Si (100) single crystal surface using low energy Ar ion beam erosion has been studied. Ion energy and ion fluence dependence of the ripple pattern is in general agreement with the reported works. However, it is found that at relatively low fluences, the pattern formation depends upon the direction of the projection of the ion beam on Si surface with respect to its crystallographic orientation. Ripple formation is facilitated if the projection of ion beam on the sample surface is along (010) direction as against (011) direction. For higher ion fluence, when the Si surface layer is fully amorphized, pattern formation is independent of the azimuthal direction of the ion beam.

Keywords

Nanoripple patterns, ion-beam irradiation, crystallographic orientation, atomic force microscopy.

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