Growth, Characterization And I-V characteristics Of Tin Oxide Nanowires

Anima Johari1, M. C. Bhatnagar2* and Vikas Rana1

1Center for Applied Research in Electronics (CARE), IIT Delhi, New Delhi 110016, India

2Physics Department, IIT Delhi, New Delhi 110016, India

Adv. Mater. Lett., 2012, 'ICNANO 2011', 3 (6), pp 515-518

DOI: 10.5185/amlett.2012.icnano.251

Publication Date (Web): Sep 23, 2012

E-mail: mukesh@physics.iitd.ac.in

Abstract


One-dimensional wire shaped tin oxide (SnO2) nanostructures have been synthesized by thermal evaporation method. The growth of SnO2 nanostructure was carried out on gold catalyst layer coated silicon substrate. X-ray diffraction (XRD) results reveals that synthesized SnO2 nanowires have polycrystalline nature with tetragonal rutile structure. SEM, TEM and EDX observation concludes that the uniform SnO2 nanowires (diameter ~ 40 nm and length ~ 50 μm) grow with vapor-liquid-solid (VLS) mechanism. I-V characteristics of single SnO2 nanowire show semiconducting behaviour. Due to structural and electrical properties of SnO2 nanowire, these nanowires would be a promising candidate for gas sensing applications.

Keywords

SnO2, nanowire, gold, TEM, thermal evaporation.

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