Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

¹Centre for Materials for Electronics Technology (C-MET), (Scientific society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India),    Athani (PO), Thrissur 680771, Kerala State, India

²Micro Engineering, Kyoto University, Kyoto 606-8501, Japan

³Mechanical Engineering, Kobe University, Kobe 657-8501, Japan

Adv. Mater. Lett., 2012, 3 (2), pp 102-106

DOI: 10.5185/amlett.2011.7281

Publication Date (Web): Apr 14, 2012

Copyright © IAAM-VBRI Press

E-mail: vkumar10@yahoo.com

Abstract

Pb(Zr_xTi_1-x)O₃ [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO₂/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31^* of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31^* have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.

Keywords

PZT, preferentially oriented thin films, transverse piezoelectric coefficient, fatigue, domain switching