1Centre for Materials for Electronics Technology (C-MET), (Scientific society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India), Athani (PO), Thrissur 680771, Kerala State, India
2Micro Engineering, Kyoto University, Kyoto 606-8501, Japan
3Mechanical Engineering, Kobe University, Kobe 657-8501, Japan
Adv. Mater. Lett., 2012, 3 (2), pp 102-106
DOI: 10.5185/amlett.2011.7281
Publication Date (Web): Apr 14, 2012
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E-mail: vkumar10@yahoo.com
Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31* of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31* have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.
PZT, preferentially oriented thin films, transverse piezoelectric coefficient, fatigue, domain switching
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