Influence Of ZnO Buffer Layer On Growth Of Sb Doped ZnO Nano Wires Using Nano Particle Assisted Pulsed Laser Deposition (NAPLD) Using Sb As Catalyst
I.A. Palani1,2*, D. Nakamura2, K. Okazaki2, T. Shimogaki2, M. Higashihata2, T. Okada2*
1Department of Mechanical Engineering, Indian Institute of Technology Indore, India
2Graduate School of Information Science and Electrical Engineering (GISEE), Kyushu University, Fukuoka, Japan
Adv. Mater. Lett., 2012, 3 (2), pp 66-70
DOI: 10.5185/amlett.2012.1302
Publication Date (Web): Apr 14, 2012
Copyright © 2019 VBRI Press
E-mail: palaniia@gmail.com, okada@ees.kyushu-u.ac.jp
Influence of ZnO buffer layer thickness on the structural and optical properties of the Sb catalyzed/doped ZnO nanowires synthesized using NAPLD has been investigated. Buffer layer with a thickness of 100 nm, 800 nm and 1600 nm coated with Sb are used as a substrate and pure ZnO was used as a target to synthesize Sb doped ZnO nanowires. Introduction of the buffer layer lead to the growth of vertically aligned along with horizontally grown ZnO nano wires. With the increase in buffer layer thickness, the core diameter of the vertically grown ZnO nano wires was subsequently increased. Nano wires synthesized with a buffer layer thickness of 1600 nm showed a significant change in the lattice constants, resulting in measurable lower angle of about 0.06º from XRD, widening of lattice fringe spacing of 0.54 nm from TEM and Suppression of A1T and E1(L0) modes in Raman Spectroscopic. In addition a strong UV emission with absence of visible emission was observed from the room temperature PL. This confirms the generation of Sb doped ZnO nano wire with high crystal quality.
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