1Department of Physics, Kannur University, Kerala, 670327, India
2Department of Physics, Farook College, Calicut, Kerala 673632, India
3Materials Science Laboratory, Department of Physics, MES Ponnani College, Ponnani, Malappuram, Kerala, India
Adv. Mater. Lett., 2021, 12 (1), 21011596
DOI: 10.5185/amlett.2021.011596
Publication Date (Web): Dec 09, 2020
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The variation of thermoelectric properties of Zr2O3-In2O3-ZnO film system is reported here. The films are fabricated in a chemical composition satisfies the relation ZrxInxZn1-xO1-δ, (0.01≥ x ≥ 0.04), through spray pyrolysis technique. XRD analysis shows a switching of preferred crystal growth orientation from (002) to (100) and (101) planes as x increases. The quasi spherical surface morphology was improved on the addition of the cations. A maximum Seebeck coefficient of -159 µV/K was obtained for x=0.01 at 400K. The decrease in the Seebeck coefficient for higher x values is explained with simplified broadband model. At elevated temperature power factor increased considerably up to 2.33 X 10-4 Wm-1K-2 for x=0.03 which was attributed to decrease in sheet resistance at high temperature.
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