Effect of Incident Light on Transport Properties of Pulsed Laser Deposited Manganite Thin Films

Pankaj Solanki1,3, Pratik Lakhani2, Ashish Ravalia3, Bharat Kataria3,*

1Department of Physics, Saurashtra University, Rajkot, Gujarat 360005, India

2Shantilal Shah Engineering College, Bhavnagar, Gujarat 364060, India

3Department of Nanoscience and Advanced Materials, Saurashtra University, Rajkot, Gujarat 360005, India

Adv. Mater. Lett., 2020, 11 (4), 20041502

DOI: 10.5185/amlett.2020.041502

Publication Date (Web): Mar 24, 2020

Email: brkataria22@rediffmail.com


In this communication, we report the results of different light illumination on electrical transport properties of La0.67Ca0.33Mn0.9Ga0.1O3 (LCMGO) thin films grown on Si (100) ( n-type phosphorus-doped) wafer using Pulsed Laser Deposition (PLD) System. The variation in deposition time changes the thickness of the films. X-ray Diffraction (XRD) reveals the polycrystalline structure of LCMGO thin films. The cross-sectional SEM were taken to determine the thickness of the films with changing deposition time. Atomic Forced Micrographs (AFM) show that island type grains diffuse into one another to form a more uniform distribution of grains as the thickness of the film increases. The charge transport properties have been studied using the I-V measurement at LCMGO/Si interfaces. I-V measurement shows the backwards-diode like the behaviour of the LCMGO/Si p-n junction. The reverse bias current changes under the influence of different incident light illumination. The built-in electric field is generated at the interface when the film was illuminated with UV light. The tunnelling process for backward diode like p-n junction is explained using a modified Simmons model.


Thin films, UV light, electron scattering, p-n junction, backward diode, modified simmons model.

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