The Effect of Complexing Reagent on Structural, Electrical and Optical Properties of CuS Thin Film

A.V. Mitkari, A.U. Ubale

Nanostructured Thin Film Materials Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra, India

Adv. Mater. Lett., 2020, 11 (1), 20011465 (1-5)

DOI: 10.5185/amlett.2020.011465

Publication Date (Web): Dec 07, 2019



Semiconducting CuS thin films were successfully prepared by Successive Ionic Layered Adsorption Reaction technique at room temperature with and without using complexing reagent viz.  hydrazine hydrate (H6N2O(N2H2),tri ethanol amine (C6H15NO3 ) and ammonia (NH3) . The structural studies revealed that; the crystallinity of the film can be tailored by using complexing agent. The dc electrical resistivity measured in the temperature range 370–473 K confirmed its semiconducting nature of CuS and it varies depending on complexing reagent. The optical absorption measurements were studied in the wavelength range 350–950 nm . The thermo-emf measurements confirmed that the films prepared are semiconducting in nature with p-type conductivity. 


Thin film, CuS, SILAR method, complexing reagent

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