Cover Page December-2019-Advanced Materials Letters

Advanced Materials Letters

Volume 10, Issue 12, Pages 860-867, December 2019
About Cover

IAAM recognizes the contribution of scientists towards the advancement of materials to global excellence with the ‘Researcher of the year’ award every year. Prof. Zhong Lin (Z. L.) Wang from Georgia Tech., USA and Prof. T. Venkatesan from Nano Core Research Center at National University of Singapore were recognized with this prestigious award in 2017 and 2018, respectively. This year, the award is presented to eminent physicist Prof. Enge Wang, Vice President of Chinese Academy of Sciences (CAS) and President Emeritus of Peking University, China, for his contribution towards the nanotechnology research and innovations. Advanced Materials Letters feels very honored and privileged to confer upon him the ‘Researcher of the Year’ award and dedicate the cover photo of December 2019 issue for his several years of diligence and uncountable achievements.


Principles and practices of Si light emitting diodes using dressed photons

M. Ohtsu1*, T. Kawazoe2

1Department of Research, Research Origin for Dressed Photon, 3-13-19 Moriya-cho, Kanagawa-ku, Yokohama, Kanagawa 2210022, Japan

2Institute of Advanced Laser Technology, Tokyo Denki University, 5 Senju-Asahi-cho, Adachi-ku, Tokyo 120-8551, Japan

Adv. Mater. Lett., 2019, 10 (12), pp 860-867

DOI: 10.5185/amlett.2019.2264

Publication Date (Web): Jan 14, 2019

E-mail: ohtsu@nanophotonics.t.u-tokyo.ac.jp

Abstract

This paper reviews basic research and technical developments on silicon (Si) light-emitting diodes (Si-LEDs) fabricated by using a novel dressed-photon–phonon (DPP)-assisted annealing method. These devices exhibit unique light emission spectral profiles in the wavelength range 900–2500 nm, including novel photon breeding features. The highest optical output power demonstrated was as high as 2.0 W. It is pointed out that boron (B) atoms, serving as p-type dopants, formed pairs whose length was three-times the lattice constant of the host Si crystal. These B atom pairs are the origin of the photon breeding. It is pointed out that photon breeding took place with respect to photon spin. Furthermore, recent measurements show that the B atom pairs tend to form a chain-like configuration.  © VBRI Press. 

Keywords

Dressed photon, silicon, phonon, annealing.

Previous issues

Current Global Scenario of Electric Vehicles

Review on Detection of Phenol in Water 

Investigating the Machinability of Metallic Matrix Composites Reinforced by Carbon Nanotubes: A Review

Photocatalytic ZnO based PES Membranes for AOP Water Treatments under UV and Sunlight

Plasma Activated Water as a Source of Nitrogen for Algae Growth

Digital Light Processing (DLP) 3D Printing of Polyethylene Glycol (PEG) Biopolymer, Commercially available Ultra-High and Tough (UHT) Resin and Maghemite (γ-Fe2O3) Nanoparticles Mixture for Tissue Engineering Scaffold Application

Fabrication of Nanoparticle Embedded Polymeric Microbeads as an Efficient Drug Delivery System

Micro/Nanostructured Papers from Bagasse Pulp Reinforced by Nanofibrillated Cellulose from different Agro-Waste Sources

Structural, Optical and Magnetic Properties of Pristine, (Mn, Al) co-doped ZnO Nanocrystallites Synthesized via co-Precipitation Method

Nanosecond Laser Surface Patterning of Ti6Al4V Bio-alloy for Improved Biological Performance

Synthesis of Cu2O/Ag Composite Nanocubes with Promising Photoluminescence and Photodegradation Activity over Methylene Blue Dye

Locally available Clays of Bangladesh as a Replacement of imported Clays for Ceramic Industries 

Green Synthesis and Characterization of Silver Nanoparticles using Cassia auriculata Leaves Extract and Its Efficacy as A Potential Antibacterial and Cytotoxic Effect

Upcoming Congress

Knowledge Experience at Sea TM