Principles and practices of Si light emitting diodes using dressed photons
M. Ohtsu1*, T. Kawazoe2
1Department of Research, Research Origin for Dressed Photon, 3-13-19 Moriya-cho, Kanagawa-ku, Yokohama, Kanagawa 2210022, Japan
2Institute of Advanced Laser Technology, Tokyo Denki University, 5 Senju-Asahi-cho, Adachi-ku, Tokyo 120-8551, Japan
Publication Date (Web): Jan 14, 2019
Copyright © 2019 VBRI Press
This paper reviews basic research and technical developments on silicon (Si) light-emitting diodes (Si-LEDs) fabricated by using a novel dressed-photon–phonon (DPP)-assisted annealing method. These devices exhibit unique light emission spectral profiles in the wavelength range 900–2500 nm, including novel photon breeding features. The highest optical output power demonstrated was as high as 2.0 W. It is pointed out that boron (B) atoms, serving as p-type dopants, formed pairs whose length was three-times the lattice constant of the host Si crystal. These B atom pairs are the origin of the photon breeding. It is pointed out that photon breeding took place with respect to photon spin. Furthermore, recent measurements show that the B atom pairs tend to form a chain-like configuration.
Dressed photon, silicon, phonon, annealing.