Graphene micromesh for transparent conductive films application 

Ryousuke Ishikawa*, Hiroki Nishida, Hiro Fukushima, Sho Watanabe, Sohei Yamazaki, Gilgu Oh, Nozomu Tsuboi

Materials Science Program, Niigata University, 8050 Ikarashi 2-nocho, Nishi-ku, Niigata, 950-2181, Japan

DOI: 10.5185/amlett.2019.2238

Publication Date (Web): Jan 14, 2019



In order to improve the properties of the graphene transparent conductive film, we developed a process of O2 plasma patterning graphene using a metal mesh as an etching mask. The CVD growth conditions of high-quality multilayer graphene samples consisting of 400 layers or more were found using Ni foil, and the R sheet = 3.4 ± 0.6 Ω/sq. was achieved. The best performance of graphene micromesh based transparent conductive films so far was R sheet = 22.2 Ω/sq. at T = 47.1 ± 1.9 %. According to theoretical calculations based on the combined resistance of the two-dimensional resistance lattice circuit, a combined resistance of 46.8 Ω can be realized at T = 90%.


Patterned graphene, plasma etching, micromesh, transparent conductive films, solar cells.

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