Materials Science Program, Niigata University, 8050 Ikarashi 2-nocho, Nishi-ku, Niigata, 950-2181, Japan
Adv. Mater. Lett., 2019, 10 (6), pp 417-420
DOI: 10.5185/amlett.2019.2238
Publication Date (Web): Jan 14, 2019
Copyright © IAAM-VBRI Press
E-mail: ishikawa@eng.niigata-u.ac.jp
In order to improve the properties of the graphene transparent conductive film, we developed a process of O2 plasma patterning graphene using a metal mesh as an etching mask. The CVD growth conditions of high-quality multilayer graphene samples consisting of 400 layers or more were found using Ni foil, and the R sheet = 3.4 ± 0.6 Ω/sq. was achieved. The best performance of graphene micromesh based transparent conductive films so far was R sheet = 22.2 Ω/sq. at T = 47.1 ± 1.9 %. According to theoretical calculations based on the combined resistance of the two-dimensional resistance lattice circuit, a combined resistance of 46.8 Ω can be realized at T = 90%.
Patterned graphene, plasma etching, micromesh, transparent conductive films, solar cells.
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