1Priyadarshini College of Engineering, Nagpur 440010, India
2Department of Physics, R.T.M. Nagpur University, Nagpur 440033, India
3Hung Hee University, Seoul, South Korea
Adv. Mater. Lett., 2012, 2 (1), pp 65-70
DOI: 10.5185/amlett.2010.10169
Publication Date (Web): Apr 08, 2012
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E-mail: sjdhoble@rediffmail.com
The mechanism of energy transfer leading to electroluminescence (EL) of a lanthanide complex, EuxY(1-x)(TTA)3Phen (TTA= thenoyltrifluoro-acetone, phen=1,10-phenanthroline), doped into TPBi(1,3,5-tris(N-Phenyl-benzimidizol-2-yl) benzene host at 15 wt% of host is investigated. With the device structure of anode/hole transport layer/EuxY(1-x)(TTA)3Phen (15%): TPBi/electron transport layer/cathode, maximum luminescence of 185.6 cd/m2 and 44.72 cd/m2 was obtained from device I made of Eu0.4Y0.6(TTA)3Phen and device II made of Eu0.5Y0.5(TTA)3Phen, respectively at 18 volts. Saturated red Eu3+emission based on 5D0→7F2 transition is centered at a wavelength of 612 nm with a full width at half maximum of 5 nm. From the analysis of I-V, J-V-L characteristics and electroluminescent (EL) spectra, we conclude that direct trapping of holes and electrons and subsequent formation of the excitation occur on the dopant, leading to high quantum efficiencies at low current densities. These results show that fabricated OLED devices can successfully emit saturated red light and can be used in applications such as opto-electronic OLED devices, displays and solid-state lighting technology.
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