1CNR IMM, Via S. Sofia 64, 95123 Catania, Italy
2Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania, Italy
3Scuola Superiore di Catania, Università di Catania, Via Valdisavoia 9, 95123 Catania, Italy
Adv. Mater. Lett., 2019, 10 (6), pp 410-416
Publication Date (Web): Jan 14, 2019
Copyright © IAAM-VBRI Press
The paper reports the potentialities of innovative silicon compatible materials for light emitting devices. In particular thin films of Er doped yttrium oxide have been synthesized by a technique totally compatible with ULSI processes. Through the structural characterization, we will verify the high stability of the film and the good dopant dissolution. Moreover, by the investigation of the optical properties, we will demonstrate that the use of this compound is effective to introduce more than 1021 Er/cm3 in optically active state, value that cannot be reached in other Si compatible materials. The influence of Er content on the optical properties will be described in details. Moreover, we will propose the introduction of a proper sensitizer for Er, bismuth, in the same thin film. In particular, we will show that the (Er+Bi) co-doped yttrium oxide is a perfect host to overcome another important drawback of Er doped materials that is its low absorption cross section. The influence of Bi and Er contents on optical properties will be extensively discussed along the paper. Through the optimization of ratio between Bi and Er concentrations, high energy transfer efficiency will be reached with simultaneously a consistent increase of the effective Er cross section. A factor of more than three orders of magnitude have been obtained with respect to the direct excitation of Er.
Light emitting devices, Erbium, yttrium oxide.