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Fabrication and characterization of nano-bridge Josephson junction based on Fe0.94Te0.45Se0.55 thin film
Jia Lu1, Wen Zhang2, Zheng Wang2, Xiaoming Ma1, 3, Shicai Shi2, Lei Yan1*, Hong Ding1, 4
1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 3rd South Street, Zhongguancun, Beijing, 100190, China
2Purple Mountain Observatory and Key Laboratory of Radio Astronomy, Chinese Academy of Sciences, No.2 West Beijing Road, Nanjing, Jiangsu, 210008, People’s Republic of China
3Department of Physics, Southern University of Science and Technology (SUSTech), No. 1088 Xueyuan Road, Shenzhen, Guangdong, 518055, China
4CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, 3rd South Street, Zhongguancun, Beijing, 100190, China
Adv. Mater. Lett., 2019, 10 (5), pp 319-323
DOI: 10.5185/amlett.2019.2270
Publication Date (Web): Jan 14, 2019
Copyright © 2018 VBRI Press
E-mail: lyan@iphy.ac.cn
Nano-bridge Josephson junction has been fabricated with Fe0.94Te0.45Se0.55 (FTS) thin films by using focused ion beam etching (FIB). Electrical properties of the Josephson effects of the nano-bridge have been deeply studied. Current-voltage (I-V) characteristics of the junction exhibit resistively and capacitively shunted junction-like (RCSJ) behaviors. Critical current of the junction is 16.1 mA at 4.2 K. The product of the critical current and normal state resistance (IcRn) is higher than those reported in the literatures. Thermal conductance of the nano-bridge increases with increasing resistance, which suggests that the thermal transfer has been enhanced. Noise equivalent power of the nano-bridge is at the order of magnitude of 10-12 WHz-1/2, which is comparable to that of the NbN bolometer. With these unique electrical characteristics, the FTS based nano-bridge could have various potential applications.
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