Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Mark Kracklauer1, 2, Fabian Ambriz-Vargas1, Gitanjali Kolhatkar1, Bernhard Huber1, 2, Christina Schindler2, Andreas Ruediger1*

1Institut Nationale de la Recherche Scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada

2Munich University of Applied Sciences, Department of Applied Sciences and Mechatronics, Lothstrasse 34, 80335 Munich, Germany

Adv. Mater. Lett., 2019, 10 (6), pp 405-409

DOI: 10.5185/amlett.2019.2225

Publication Date (Web): Jan 10, 2019

E-mail: ruediger@emt.inrs.ca

Abstract


The continued evolution of electronic devices relies on the development of new semiconductor memory technology. Given the high compatibility of the Hf0.5Zr0.5O2 thin films with the CMOS technology, we investigate the charge transport mechanisms that occur in a relative thick Hf0.5Zr0.5O2 thin film (4 to 6 nm-thick) when subjected to electrical stresses. To that end we fabricate Hf0.5Zr0.5O2 heterostructures with a Pt tip as the top electrode and TiN and Pt as bottom electrode by radio-frequency magnetron sputtering. After analyzing the surface morphology of the as-received and as-deposited films by atomic force microscopy, the transfer of the desired chemical stoichiometry from the sputtering target to the substrate surface is studied by Raman spectroscopy. The ferroelectricity of the Hf0.5Zr0.5O2 thin films is confirmed by piezoresponse force microscopy measurements, and a retention of 22 h is obtained, attesting to the non-volatility of the samples. Nano-scale electrical measurements reveal the presence of resistive switching, where the low resistance state (ON state) in both Pt-tip/Hf0.5Zr0.5O2/TiN and Pt-tip/Hf0.5Zr0.5O2/Pt heterostructures can be created by the formation of a conductive filament based on oxygen vacancies.

Keywords

Electrical charge transport mechanism, Thin films, CMOS compatible, Nanoscale characterization.

Current Issue
The Journey of a Decade to Advancing Materials
Are the Electrospun Polymers Polymeric Fibers?
Mechanical and Thermal Properties of Composite Material and Insulation for a Single Walled Tank for Cryogenic Liquids
Prediction of Long-Term Behavior for Dynamically Loaded TPU
Investigation of Doped Titanium Dioxide in Anatase Phase. Study ab initio using Density Functional Theory
Comparison between Single Al2O3 or HfO2 Single Dielectric Layers and their Nanolaminated Systems
Preparation of Stable and Optimized Antibody-gold Nanoparticle Conjugates for Point of Care Test Immunoassays
Resonance-Based Temperature Sensors using a Wafer Level Vacuum Packaged SOI MEMS Process
Integrated System Based on the Hall Sensors Incorporating Compensation of the Distortions
The Efficacy of Cinnamomum Tamala as a Potential Antimicrobial Substance against the Multi-Drug Resistant Enterococcus Faecalis from Clinical Isolates
The Effect of Complexing Reagent on Structural, Electrical and Optical Properties of CuS Thin Film
Laser Cladding of Fluorapatite Nanopowders on Ti6Al4V
Preparation and Evaluation of Sulfonate Polyethylene Glycol Borate Ester as a Modifier of Functional Properties of Complex Petroleum Lithium Grease

Upcoming Congress

Knowledge Experience at Sea TM