Effect of the substrate bias in diamond deposition during hot filament chemical vapor deposition: Approach by non-classical crystallization 

¹Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea

²School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea

³Global Frontier R&D Center for Hybrid Interface Materials, Pusan National University, Busan 46241, Korea

Adv. Mater. Lett., 2018, 9 (9), pp 638-642

DOI: 10.5185/amlett.2018.2082

Publication Date (Web): Jun 14, 2018

Copyright © IAAM-VBRI Press

E-mail: nmhwang@snu.ac.kr

Abstract

The effect of the substrate bias on the diamond deposition was studied using a hot filament chemical vapor deposition (HFCVD) reactor. Both growth rate of diamonds and sp³/sp² ratio increased with increasing the substrate bias from – 200 V to + 45 V. At + 60 V where the DC glow discharge occurred, however, the data deviated significantly from the tendency. These results were explained by the new concept of non-classical crystallization, where a building block of diamond growth is a charged nanoparticle rather than an atom. Based on the previously reported experimental confirmation of the gas phase generation of negatively-charged diamond nanoparticles, the bias effect on the diamond deposition behavior could be consistently explained.

Keywords

Bias, diamond film, nanoparticles, hot filament cvd, microstructure.