Effect of the substrate bias in diamond deposition during hot filament chemical vapor deposition: Approach by non-classical crystallization
Jin-Woo Park1, Kwang-Ho Kim2, 3, Nong-Moon Hwang1*, 3
1Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea
2School of Materials Science and Engineering, Pusan National University, Busan 46241, Korea
3Global Frontier R&D Center for Hybrid Interface Materials, Pusan National University, Busan 46241, Korea
Adv. Mater. Lett., 2018, 9 (9), pp 638-642
DOI: 10.5185/amlett.2018.2082
Publication Date (Web): Jun 14, 2018
Copyright © 2019 VBRI Press
E-mail: nmhwang@snu.ac.kr
The effect of the substrate bias on the diamond deposition was studied using a hot filament chemical vapor deposition (HFCVD) reactor. Both growth rate of diamonds and sp3/sp2 ratio increased with increasing the substrate bias from – 200 V to + 45 V. At + 60 V where the DC glow discharge occurred, however, the data deviated significantly from the tendency. These results were explained by the new concept of non-classical crystallization, where a building block of diamond growth is a charged nanoparticle rather than an atom. Based on the previously reported experimental confirmation of the gas phase generation of negatively-charged diamond nanoparticles, the bias effect on the diamond deposition behavior could be consistently explained.
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