Cover Page May-2018-Advanced Materials Letters

Advanced Materials Letters

Volume 9, Issue 5, Pages 345-352, May 2018
About Cover

The cover page describes the Top and side views of optimized Li2O2 on the 5-8-5 defect graphene with COOH functional groups. This figure has been taken from the manuscript entitled “Recent advances in lithium-air batteries”


Fabrication and magnetic properties of Sol-Gel derived NiZn ferrite thin films for microwave applications

Shauna Robbennolt1, Stephen S. Sasaki1, Tylisia Wallace1, Marquise Bartholomew1, Sarah H. Tolbert1*

1Department of Chemistry and Biochemistry, University of California, Los Angeles, California 90095-1569, United States

2Department of Materials Science & Engineering and the California Nano Systems Institute, University of California, Los Angeles, California 90095, United States

Adv. Mater. Lett., 2018, 9 (5), pp 345-352

DOI: 10.5185/amlett.2018.1996

Publication Date (Web): May 17, 2018

E-mail: shauna.robbennolt@outlook.com

Abstract

We present a new solution-phase, sol-gel based spin-coating method to fabricating high quality, nickel zinc ferrite (NZFO) thin films. The effect of annealing temperature on the microstructure, static magnetic properties and X-band FMR linewidth and resonance field was investigated. Furthermore, the effect of composition on these properties was explored in films with the formula NixZn(1-x)Fe2O4 (where x = 0 to 1 in 0.1 increments). Films annealed at the highest annealing temperature of 1100 ?C were found to have the highest saturation magnetization and coercivity, as well as the lowest FMR linewidths. Films with the composition Ni0.3Zn0.7Fe2O4 were found to have the lowest linewidths along with favorable magnetic properties for microwave applications. The champion film showed an FMR linewidth of 93 G, corresponding to a low Gilbert damping coefficient of α = 0.003, a saturation magnetization of 330 emu/cm3, and a coercivity and anisotropy field of 14 and 62 Oe respectively.

Keywords

Nickel zinc ferrite, thin film, sol-gel, FMR.

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