1Institut Charles Gerhardt Montpellier, UMR 5253 CNRS-UM, Place Eugene Bataillon, 34095 Montpellier, France
2Laboratoire de Mécanique, Physique et Modélisation Mathématique, Université Dr. Yahia Fares, 26000 Médéa, Algérie
3MAX-IV Laboratory, Lund University, P.O. Box 118, SE-221 00 Lund, Sweden
4Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warsaw, Poland
5University of Mostaganem, Avenue Hamadou Hossine, Mostaganem, Algeria
Adv. Mater. Lett., 2017, 8 (12), pp 1188-1192
Publication Date (Web): Sep 08, 2017
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The magnetic field dependencies of Hall resistance are studied for Ga0.94Mn0.06As/In0.15Ga0.85As film. The Hall resistance shows a slanted hysteresis cycle, emphasizing the existence of both in-plane and out-of-plane magnetization components. The anisotropy constants of the sample with out-of-plane magnetization are extracted from the angular dependence of Hall resistance measurements. The angular dependence of free magneto-crystalline energy theoretical analysis allows us to confirm the dominance of uniaxial magnetic anisotropy at specific temperatures. Here, precise angular dependence of magnetoresistance Hall Effect measurements and careful analysis using free energy model, enable us to demonstrate how the magnetic easy axis could be reoriented by the temperature within the ferromagnetic phase at the temperature far from the Curie Weiss value. This promising property will offer applicative opportunity of GaMnAs material with temperature induced transition of easy magnetization axis in detection of weak magnetic fields within the cryogenic range of low temperature phenomenon.
Diluted magnetic semiconductor materials, spintronics, hall resistance, magnetic anisotropy.