Growth and characterization of graphite doped CdTe/CdS thin film heterojunction

Muhammad Asghar1*, Ya Hong Xie2, M. Asif Nawaz1, Hammad M. Arbi1, M. Y. Shahid1, F. Iqbal1, Waqas Khalid1

1Department of Physics, The Islamia University of Bahawalpur, 63100, Pakistan

2Department of Applied Materials & Engineering, UCLA, USA

Adv. Mater. Lett., 2017, 8 (8), pp 878-882

DOI: 10.5185/amlett.2017.7094

Publication Date (Web): May 23, 2017



Doping is a notable factor to improve the performance of CdTe/CdS heterojunction solar cell. Graphite doped CdTe/CdS heterojunction on Si (1 1 1) substrate has systematically fabricated by thermal evaporator method under medium vacuum (10-4 torr) condition. Characterization of doped CdTe/CdS film was carried out by various diagnostic techniques such as X-ray diffraction (XRD) exhibits the polycrystalline structure of cubic phase CdTe and hexagonal phase CdS, scanning electron microscopy (SEM) shows the smoothening of the film, energy dispersive X-ray (EDX) confirm the elemental composition found in the film and current-voltage (I-V) analysis suggests the diode like properties where the current is slightly increased by the doping of graphite into CdTe/CdS heterojunction compared to the reported literature. Analysis of I-V characteristics has been made to investigate the current conduction mechanism in CdTe/CdS heterojunction. 


CdTe, CdS, graphite, heterojunction

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