Characterization And Synthesis Of Bi2Se3 Topological Insulator Thin Film Using Thermal Evaporation

Bushra Irfan and Ratnamala Chatterjee

Department of Physics, Indian Institute of Technology Delhi (IITD), New Delhi 110016, India

Adv. Mater. Lett., 2016, 7 (11), pp 886-890

DOI: 10.5185/amlett.2016.6208

Publication Date (Web): Oct 01, 2016

E-mail:rmala@physics.iitd.ac.in

Abstract


Topological insulators are the new phase of matter with bulk insulating and conducting surface states. Among the known three dimensional topological insulators, bismuth selenide (Bi2Se3) is one of the most promising materials for studying topological insulating properties. Bi2Se3 thin films are grown using thermal evaporation technique and atomically smooth films are obtained by post annealing treatment. Pure phase of Bi2Se3 is confirmed using x-ray diffraction; Raman spectroscopy shows a strong intensity of A11g, E2g and A21g 2Se3 thin films. The surface studies on these films are carried out using scanning electron microscopy and atomic force microscopy. X-ray photoelectron spectroscopy (XPS) is used for elemental analyses in Bi2Se3 thin film. The surface quality of the film is improved with plasma etching (i.e. argon etching) in XPS. High quality Bi2Se3 thin films can be used further for investigation on transport properties of topological insulators.

Keywords

Thin film, Bi2Se3, topological insulators.

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