Cover Page July-2016-Advanced Materials Letters

Advanced Materials Letters

Volume 7, Issue 7, Pages 517-524, July 2016
About Cover


Defect Analysis And Performance Evaluation Of P-type Epitaxial GaAs Layer On Ge Substrate For GaAs/Ge Based Advanced Device

Goutam Kumar Dalapati1*, Vignesh Suresh1, Sandipan Chakraborty2, Chandreswar Mahata3, Yi Ren1, Thirumaleshawara Bhat1, Sudhiranjan Tripathy1, Taeyoon Lee3, Lakshmi Kanta Bera1, Dongzhi Chi1

1Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Fusionopolis Way, #08-03, Innovis 138634, Singapore

2Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive, 3, 117576, Singapore

3Nanobio Device Laboratory, School of Electrical and Electronic Engineering, Yonsei University,134 Shinchon-Dong, Seodaemun-Gu, Seoul 120-749, Republic of Korea

Adv. Mater. Lett., 2016, 7 (7), pp 517-524

DOI: 10.5185/amlett.2016.6439

Publication Date (Web): Jun 12, 2016

E-mail: dalapatig@imre.a-star.edu.sg

Abstract

The structural defects and formation of native oxides during thermal treatment on p-type epitaxial-GaAs/Ge have been investigated using spectroscopic measurements and electrical characterization. The performance of epi-GaAs based device depends on the interface quality between epi-GaAs and gate oxide and structural quality of the epi-GaAs layer. P-type epitaxial-GaAs was grown on Ge substrate using MOCVD technique at 675oC. Defective surface native oxides of arsenic and gallium oxides are observed for as-grown epi-GaAs layer. The arsenic oxide significantly reduced after thermal treatment as seen from XPS observations. The structural defects at surface enhanced after thermal treatment which is clearly probed by micro-Raman spectroscopy. Atomic layer deposited (ALD) Al2O3 significantly improved the interface properties after thermal treatment compared with bare epi-GaAs layer. Even though, the interface trap defect density slightly higher for p-type epi-GaAs MOS capacitor compared with bulk p-type GaAs devices, high frequency-dispersion in epi-GaAs based devices observed. This is mainly governs through the formation of p-i-n junction diode in the epi-GaAs layer on Ge substrates.

Keywords

GaAs, native oxides, Raman spectroscopy, rapid thermal annealing, GaAs/Ge integration.

Current Issue

Cloud Medicine set to Revolutionize Doorstep Personalized Healthcare


Various surfactants for 0 – 3 dimensional nanocarbons: Separation, exfoliation and solubilization


Polypyrrole based biofunctional composite layer for bioelectrocatalytic device system


Innovative Graphene-PDMS sensors for aerospace applications 


Effect of hot drawing process and carbonization temperature in electrochemical behavior of electrospun carbon nanofibers


Chemical Reactivity and Electronical Properties of Graphene and Reduced Graphene Oxide on Different Substrates


Laser Raman micro-spectroscopy as an effective non-destructive method of detection and identification of various sp2 carbon modifications in industry and in nature


Electrochemical promotion of ammonia synthesis with proton-conducting solid oxide fuel cells


Biomimetic surfaces with hierarchical structure using microsized texture and nanosized Cu particles for superhydrophobicity


Enhancement the properties of high and low-density polyethylene membranes by radiation grafting process


Synthesis of 9-Aminoacridine and its Application as an Anode Material for Aqueous Rechargeable Lithium–ion Batteries


Facile synthesis of novel tough and highly flexible biodegradable membranes for water microfiltration


Investigating the possibility of using acetic acid in place of HF in chromium-benzenedicarboxylates (MIL-53 and MIL-101) synthesis applicable for CO2 adsorption


Previous issues

Smart Healthcare pulls up Clouds for Virtual Medicine

Selecting the correct electromagnetic inspection technology 

Influence of railway-track grinding on the track material condition and tribological behaviour

Micromechanical Fatigue Modelling of the Size Effect in Micro-Scale 316L Stainless Steel Specimens

Functionalization of Graphene and Reduced Graphene Oxide in Different Matrices

Effect of parasitic polytypes on ballistic electron transport in chemical vapor deposition grown 6H-SiC epitaxial layers

Photomemristive heterostructures based on two-dimensional crystals

Architecture - behaviour - properties relationship in Star-shaped MPA-PMMA and MPA-PS hyper-branched copolymers

Graphene and doped graphene: A comparative DFT study

Ag2CO3 / Magnetic reduced graphene oxide nanocomposite as advanced visible light photocatalytic hybrid materials for efficient degradation of azo dye

Optimization of acid hydrolysis process for the preparation cellulose nanofibrils

Alginate/k-carrageenan and alginate/gelatin composite hydrogel beads for controlled drug release of curcumin

Study of microstructure and mechanical properties of friction stir welded ferrite-martensite DP700 steel

Upcoming Congress

Knowledge Experience at Sea TM