Charge Carrier Generation In A Polymer By Using N-type Doping For The Improvement Of Electrical Properties

Manisha Bajpai1*, Ritu Srivastava2, Ravindra Dhar1, R. S.Tiwari3 and Suresh Chand2

1Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad 211002, India

2Physics for Energy Division, National Physical Laboratory (Council of Scienti?c and Industrial Research),  Dr. K. S. Krishnan Harvesting Road, New Delhi 110012, India

3Department of Physics, Banaras Hindu University, Varanasi 221005, India

Adv. Mater. Lett., 2016, 7 (5), pp 414-418

DOI: 10.5185/amlett.2016.6028

Publication Date (Web): Apr 04, 2016



In this paper, the charge carrier generation in polymer blends by chemical doping has studied. In these studies, we employed n-type dopant molecule decamethylcobaltocene (DMC) which exhibit very strong electron donating nature. We have demonstrated that such type of doping favours the formation of charge transfer complex (CTC) and reduce the recombination probability. We have confirmed the CTC formation form the absorption spectroscopy. Further we have used transient photoluminescence spectroscopy to reveal the reduced initial recombination of charge transfer exciton. We interpret our results based on a reduced formation of emissive charge transfer excitons in doped blends, induced by state filling of immobile tail states in the polymer HOMO. 


Conjugated polymers, n-type doping, charge transfer complex.

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