Structural, Optical And Electrical Properties Of Cu(InGa)SeTe Device With The Varying Laser Pulses
Abhay Kumar Singh1, 2*, R. Ganesan2, Jong Tae Park1
1Department of Electronics Engineering, Incheon National University, South Korea 460772
2Department of Physics, Indian Institute of Science, Bangalore 560012, India
Adv. Mater. Lett., 2015, 6 (6), pp 513-517
DOI: 10.5185/amlett.2015.5774
Publication Date (Web): May 28, 2015
Copyright © 2019 VBRI Press
E-mail: abhaysngh@rediffmail.com
Next-generation high-performance heterojunction photovoltaic (PV) modules can be fabricated with an appropriate active layer material. Therefore, it is worth to examine physical properties of the recent developed Cu25(In16Ga9)Se40Te10 (CIGST) material for the potential photovoltaic application. This, report demonstrates the structural, optical and electrical properties of the 8000 and 16000 pulses deposited CIGST films on top of the ITO coated soda lime substrate (CIGST/ITO/substrate); whereas, the substrate temperature was 5500 C. The 16000 pulses deposited thin film surface roughness (45 nm) and thickness (~1.4 μm) are obtained lower and higher than the 8000 pulses thin film. The cross sectional EDS elemental mapping also gives the fewer interlayer inclusions for the 8000 pulses deposited thin film. With the increasing thin films thicknesses a distinguishable UV/Visible peak shift toward the high wavelength side and enhance in optical energy band gap (1.13 and 1.2 eV) are noticed. Device fabricated (CIGST/ITO/substrate) with the 16000 pulses have a sharp current growth upto 2.0 × 10-2 amp with a lower resistance under the applied voltage range 0-20V. The internal (IQE) and external (EQE) quantum efficiencies charge carriers transport for the fabricated devices are also discussed.
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