Structural, Optical And Electrical Properties Of Cu(InGa)SeTe Device With The Varying Laser Pulses

¹Department of Electronics Engineering, Incheon National University, South Korea 460772

²Department of Physics, Indian Institute of Science, Bangalore 560012, India 

Adv. Mater. Lett., 2015, 6 (6), pp 513-517

DOI: 10.5185/amlett.2015.5774

Publication Date (Web): May 28, 2015

Copyright © IAAM-VBRI Press

E-mail: abhaysngh@rediffmail.com

Abstract

Next-generation high-performance heterojunction photovoltaic (PV) modules can be fabricated with an appropriate active layer material. Therefore, it is worth to examine physical properties of the recent developed Cu₂₅(In₁₆Ga₉)Se₄₀Te₁₀ (CIGST) material for the potential photovoltaic application. This, report demonstrates the structural, optical and electrical properties of the 8000 and 16000 pulses deposited CIGST films on top of the ITO coated soda lime substrate (CIGST/ITO/substrate); whereas, the substrate temperature was 550⁰ C. The 16000 pulses deposited thin film surface roughness (45 nm) and thickness (~1.4 μm) are obtained lower and higher than the 8000 pulses thin film. The cross sectional EDS elemental mapping also gives the fewer interlayer inclusions for the 8000 pulses deposited thin film. With the increasing thin films thicknesses a distinguishable UV/Visible peak shift toward the high wavelength side and enhance in optical energy band gap (1.13 and 1.2 eV) are noticed. Device fabricated (CIGST/ITO/substrate) with the 16000 pulses have a sharp current growth upto 2.0 × 10^-2 amp with a lower resistance under the applied voltage range 0-20V. The internal (IQE) and external (EQE) quantum efficiencies charge carriers transport for the fabricated devices are also discussed.

Keywords

CIGST, PLD, thin films, optical property.