Inverted Ternary Bulk Hetrojunction Hybrid Photovoltaic Device Based On AgInSe2 –polymer Blend As Absorber And PEDOT: PSS As Hole Transport Layer

¹Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice,Studentska 573, Pardubice 532 10, Czech Republic

²Chemistry Department, Queen’s University, Kingston, ON, Canada

Adv. Mater. Lett., 2015, 6 (5), pp 421-424

DOI: 10.5185/amlett.2015.5781

Publication Date (Web): May 05, 2015

Copyright © IAAM-VBRI Press

E-mail: dineshpathak80@gmail.com

Abstract

For the first time Inverted ternary bulk hetrojunction hybrid photovoltaic device based on AgInSe₂ – polymer blend as absorber and PEDOT:PSS as hole transport layer was fabricated and characterized. Blends of MDMOPVV.PCBM.AIS (MDMOPVV-Poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene], PCBM-(Phenyl-C₆₁-butyric acid methyl ester), AIS-AgInSe₂) used as absorber layer. Bulk hetrojuction hybrid Photovoltaic device Ag/PEDOT:PSS /MDPVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system as inverted cell configuration. The best performance and photovoltaic parameters, were obtained using an open-circuit voltage of about Voc 0.24 V, a photocurrent of Jsc 0.56 JSC (mA/cm²), 28.4 (%) FF and an efficiency of 0.038 percent with a white light illumination intensity of 100 mW/cm². Further improvement efforts for better performance are on the way. Successful fabrication and working of this inverted device suggest further optimizations like spinning rate/thickness/solvents/depositions rates for active layers and proceeding further in light of knowledge of recombination studies and molecular modeling of AIS nanopowder with this organic system for better performance of a bulk hetrojunction hybrid solar cell.

Keywords

Bulk hetrojuction solar cell, hybrid electronics, blend photovoltaics, hole transport.