Inverted Ternary Bulk Hetrojunction Hybrid Photovoltaic Device Based On AgInSe2 –polymer Blend As Absorber And PEDOT: PSS As Hole Transport Layer
1Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice,Studentska 573, Pardubice 532 10, Czech Republic
2Chemistry Department, Queen’s University, Kingston, ON, Canada
Adv. Mater. Lett., 2015, 6 (5), pp 421-424
Publication Date (Web): May 05, 2015
Copyright © IAAM-VBRI Press
For the first time Inverted ternary bulk hetrojunction hybrid photovoltaic device based on AgInSe2 – polymer blend as absorber and PEDOT:PSS as hole transport layer was fabricated and characterized. Blends of MDMOPVV.PCBM.AIS (MDMOPVV-Poly[2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylenevinylene], PCBM-(Phenyl-C61-butyric acid methyl ester), AIS-AgInSe2) used as absorber layer. Bulk hetrojuction hybrid Photovoltaic device Ag/PEDOT:PSS /MDPVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system as inverted cell configuration. The best performance and photovoltaic parameters, were obtained using an open-circuit voltage of about Voc 0.24 V, a photocurrent of Jsc 0.56 JSC (mA/cm2), 28.4 (%) FF and an efficiency of 0.038 percent with a white light illumination intensity of 100 mW/cm2. Further improvement efforts for better performance are on the way. Successful fabrication and working of this inverted device suggest further optimizations like spinning rate/thickness/solvents/depositions rates for active layers and proceeding further in light of knowledge of recombination studies and molecular modeling of AIS nanopowder with this organic system for better performance of a bulk hetrojunction hybrid solar cell.
Bulk hetrojuction solar cell, hybrid electronics, blend photovoltaics, hole transport.