Effect Of Substrate Temperature On Nanocrystalline CeO2 Thin Films Deposited On Si Substrate By RF Magnetron Sputtering

Preetam Singh, K. M. K. Srivatsa* and Sourav Das

Physics of Energy Harvesting Division, Council of Scientific and Industrial Research (CSIR) - National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi, 110012, India

Adv. Mater. Lett., 2015, 6 (5), pp 371-376

DOI: 10.5185/amlett.2015.5777

Publication Date (Web): May 05, 2015

E-mail: kmk_srivatsa@mail.nplindia.org


Single oriented nanocrystalline CeO2 thin films have been deposited over Si (100) substrate by RF magnetron sputtering in the temperature range 600-700 oC, using CeO2 target. X-ray diffraction pattern for the as deposited CeO2 film at 700oC shows the dominant (111) orientation with corresponding FWHM value of 0.378o and the crystallite size 21.50 nm. The refractive index and the optical band gap both were found to increase from 2.35 to 2.66 and 3.25 to 3.43 eV, respectively with increasing substrate temperature. Atomic force microscopy results reveal highly smooth surface of the deposited films with surface roughness below 1.15 nm for the entire range of deposition temperatures. Further, the contact angle measurements on the as deposited CeO2 films showed variation from 122.36 to 81.67o with respect to the substrate temperature, transforming the wetting property from hydrophobic to hydrophilic in nature. These results indicate the possibility of producing CeO2 films with varying properties for various device applications simply by controlling the substrate temperature.


CeO2 thin films, nanocrystalline, RF magnetron sputtering, ellipsometer, contact angle.

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