1Department of Physics, R. B. S. College, Agra, UP 282002, India
2Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India
3UGC-DAE CSR Khandwa Road, Indore, M.P. 452017, India
Adv. Mater. Lett., 2014, 5 (11), pp 666-670
DOI: 10.5185/amlett.2014.nib501
Publication Date (Web): Nov 09, 2014
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Nanocrystalline tin oxide (SnO2) thin films were fabricated using pulsed laser deposition (PLD) technique. The as-deposited films were irradiated at liquid nitrogen (LN2) temperature using 100 MeV Ag ions at different fluences ranging from 3×1013 to 3×1014 ions/cm2 and at 75o with respect to surface normal. Pristine and irradiated samples were characterized using XRD, AFM, Raman and I-V (current-voltage characteristics) for the study of modifications in structural, surface morphological, bond angle and resistivity respectively. XRD patterns show that the pristine film is highly polycrystalline and irradiation amorphizes the film systematically with increasing the irradiation fluence. The surface of the pristine film contains nanograins of tin oxide with roughness 5.2 nm. Upon irradiation at lower fluences agglomeration is seen and roughness increased to 10.8 nm. Highest fluence irradiation again develops nanograins with roughness 7.5 nm. Raman spectra and I-V characteristics also confirms the irradiation induced amorphization. The observed results are explained in the frame work of thermal spike model.
Tin oxide thin film, nanostructures, amorphization, pulsed laser deposition, swift heavy ion irradiation, liquid nitrogen temperature
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