Department of Engineering Physics, Ankara University, Ankara 06100, Turkey
Adv. Mater. Lett., 2014, 5 (6), pp 309-314
DOI: 10.5185/amlett.2014.amwc.1016
Publication Date (Web): Mar 23, 2014
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E-mail: sgurakar@eng.ankara.edu.tr
The effect of Cu, Al and In doping on the microstructural and the electrical properties of the SnO2 films were studied. The undoped, Cu, Al and In (2 at. %) doped SnO2 films were deposited on the glass substrate by spray pyrolysis from 0.8 M SnCl2–ethanol solution at substrate temperature 400 °C. The microstructural properties of films were investigated by X-ray diffraction (XRD) method. It was determined that the films formed at polycrystalline structure in tetragonal phase and structure was not changed by dopant species. The lattice parameters (a), (c) and crystallite size (D) were determined and obtained in the range of 4.90-4.92 Å, 3.26-3.31 Å and 34-167 Å, respectively. The optical transmittance of thin films was measured and the optical band gap Eg values of the films were obtained in the range of 3.96-4.00 eV, using the Tauc relation. The electrical transport properties of undoped, Cu, Al and In-doped SnO2 films were investigated by means of conductivity measurements in a temperature range of 120-400 K. The electrical transport mechanism of the undoped, Cu, Al and In-doped SnO2 films was determined by means of the tunneling model through the back-to-back Schottky barrier and the thermionic field emission model in the temperature range of 120-300 K and 300-400 K, respectively.
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