TiO2 Modified ZnO Thick Film Resistors As Ammonia Gas Sensors

V. S. Kalyamwar1*, F. C. Raghuwanshi2

1Department of Physics, Bharatiya Mahavidyalaya, Amravati 444605, India

2Department of Physics, Vidyabharati Mahavidyalaya, Amravati 444602, India

Adv. Mater. Lett., 2013, 4 (12), pp 895-898

DOI: 10.5185/amlett.2013.4456

Publication Date (Web): Nov 24, 2013

E-mail: vinu_phy@rediffmail.com

Abstract


Zinc oxide nanostructures were synthesized by chemical route method. The XRD spectrum indicates that the sample is wurtezite (hexagonal) structured ZnO with lattice constants of a = 3.249A0, c = 5.206 A0. Thick films of synthesized ZnO were prepared by screen printing technique. The TiO2 modified ZnO were obtained by dipping them into an aqueous solution of titanium tetrachloride for different interval of time. Gas sensing properties of pure and modified ZnO thick films were investigated. The TiO2 modified ZnO thick film dipped for 5 min were observed to be more sensitive as compared to other modified thick films at 1250C. The effect of surface microstructure and TiO2 concentrations on the sensitivity, selectivity, response and recovery of the sensor in the presence of NH3 and other gases ware studied and discussed.

Keywords

ZnO nanostructure, TiO2 modified ZnO thick films, ammonia sensor, room temperature gas sensor.

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