Cu doped ZnTe; XRD; hexagonal phase; band gap; transmittance.
Department of Physics, Selvam College of Technology, Namakkal 637 003, Tamil Nadu, India
Adv. Mater. Lett., 2012, Current Issue, 4 (3), pp 225-229
Publication Date (Web): Jan 21, 2013
Copyright © IAAM-VBRI Press
Ultrathin (250 Å) initial deposit of copper on glass substrates were used for the subsequent deposition of ZnTe films under a pressure of 10-5 m.bar by thermal evaporation method. The decrease of atomic percentage of copper with increase of the ZnTe film thickness is confirmed by EDAX analysis. The phase change from hexagonal to cubic structure is observed by XRD analysis. The strain (), grain size (D) and dislocation density ( ) were calculated and results are discussed. The transmittance and the optical bandgap energy were found decreases when increases of ZnTe film thickness. The optical transition of these films is found to be direct allowed.
Cu doped ZnTe, XRD, hexagonal phase, band gap, transmittance.