Cover Page January-2013, 'ICNANO 2011'-Advanced Materials Letters

Advanced Materials Letters

Volume 4, Issue 1, Pages 68-70, January 2013, 'ICNANO 2011'
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Preparation and Characterization of The Chromium Doped ZnTe Thin Films

Dinesh C. Sharma1,2,*, Subodh Srivastava1, Y. K. Vijay1 and Y. K. Sharma1

1Department of physics, University of Rajasthan, Jaipur 302004, India
2Department of physics, Yagyavalkya Institute of Technology, Jaipur 302022, India

Adv. Mater. Lett., 2013, 'ICNANO 2011', 4 (1), pp 68-70

DOI: 10.5185/amlett.2013.icnano.118

Publication Date (Web): Oct 14, 2012

E-mail: dcsharma1970@gmail.com

Abstract

The chromium doped zinc telluride (ZnTe:Cr) as well as ZnTe thin films and their sandwich structures were prepared onto glass substrate by thermal evaporation method under the vacuum of 10-5 Torr. We have studied the structural, optical and electrical properties of thermally evaporated Cr-doped ZnTe thin films as a function of Cr concentration. XRD measurements show that Cr-doped ZnTe films possess the mix phase of cubical and hexagonal structure of ZnTe thin film. The optical energy band gap (Eg) calculated from the optical absorption spectra which was observed around 2.57 eV for undoped ZnTe, and reduced to 1.47 eV for the Cr-doped thin films. The result of I-V characteristics is also presented in this paper.

Keywords

ZnTe:Cr thin films, XRD, UV-Vis spectrophotometer, I-V characteristics.

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