Nanostructures; lattice thermal conductivity; GaAs; phonon scatterings; lattice defects; surface rou
1Department of physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan, Iraq
2Department of physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan, Iraq
3Department of physics, College of Science, University of Kirkuk, Kirkuk, Iraq
Adv. Mater. Lett., 2012, 'ICNANO 2011' Special Issue-1, 3 (6), pp 449-458
Publication Date (Web): Sep 23, 2012
Copyright © IAAM-VBRI Press
Theoretical calculations of the magnitude and temperature variation of the measured thermal conductivity of undoped and doped GaAs nanobeams will present. The calculations have been performed by employing modified Callaway’s theoretical model. In the model, both longitudinal and transverse modes are explicitly taken into account. Scattering of phonons is assumed to be by nanobeam boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. A method is used to calculate the Debye temperature and phonon group velocities for undoped and doped nanobeams from their related melting points. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. The drop in thermal conductivity of doped nanobeams compared to that of the undoped beams arises from electron-phonon scattering and additional phonon scattering from a large number of point impurities due to the presence of dopant atoms. Effect of Gruneisen parameter, surface roughness, and dislocations are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves.
Nanostructures, lattice thermal conductivity, GaAs, phonon scatterings, lattice defects, surface roughness.