PZT; preferentially oriented thin films; transverse piezoelectric coefficient; fatigue; domain sw

Deposition Of PZT Thin Films With (001), (110), and (111) Crystallographic Orientations And Their transverse Piezoelectric Characteristics

D. Ambika1, V. Kumar1*, K. Tomioka2, Isaku Kanno3,2

1Centre for Materials for Electronics Technology (C-MET), (Scientific society, Department of Information Technology, Ministry of Communication and Information Technology, Govt. of India),    Athani (PO), Thrissur 680771, Kerala State, India

2Micro Engineering, Kyoto University, Kyoto 606-8501, Japan

3Mechanical Engineering, Kobe University, Kobe 657-8501, Japan

Adv. Mater. Lett., 2012, 3 (2), pp 102-106

DOI: 10.5185/amlett.2011.7281

Publication Date (Web): Apr 14, 2012

E-mail: vkumar10@yahoo.com


Pb(ZrxTi1-x)O3 [PZT] thin films of morphotropic phase boundary (MPB) composition having {001}, {110}, and {111}-orientations were fabricated on silicon substrates (111)Pt/Ti/SiO2/Si using a metal organic decomposition spin-coating technique. The influence of crystallographic orientation on the transverse piezoelectric coefficient e31* of the films have been determined. The largest e31* was found in {110}-oriented film. The differences observed in e31* have been explained on the basis of domain wall contributions which are dependent on film texture. The influence of thin film texture on polarization switching characteristics have also been studied.


PZT, preferentially oriented thin films, transverse piezoelectric coefficient, fatigue, domain switching

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