Feature Behavior of Resistivity in Bi Foils Obtained by a Melt Spinning Method

Feature Behavior of Resistivity in Bi Foils Obtained by a Melt Spinning Method

Gennadiy N. Kozhemyakin*, Stanislav Y. Kovalev

Shubnikov Institute of Crystallography of Federal Scientific Research Center “Crystallography and Photonics” of Russian Academy of Sciences, Moscow 119333, Russia

Adv. Mater. Lett., 2021, 12 (7), 21071646

DOI: 10.5185/amlett.2021.071646

Publication Date (Web): Jun 12, 2021

E-mail: genakozhemyakin@mail.ru


Bi foils with 9-40 µm thicknesses were obtained by a melt spinning method. The microstructure and resistivity in Bi foils at cryothermal treatment have been studied. The foil samples were characterized using XRD to identify the plane orientations and SEM to observe the morphology. The resistivity of Bi foils was measured by two-point probe method at temperatures of 77-300 K using a laboratory cryostat. The formation of Bi polycrystalline foils with a specific orientation allowed us to discover SMSC (Semimetal-Semiconductor Transition) in Bi foils with a 9 µm and 11 µm thicknesses at temperatures of 180-220 K. It was observed that cryogenic cycling increases the resistivity in Bi foils by a factor of 6-19. The experimental results showed that cryothermal treatment provided exfoliation of Bi bilayers with appearance charge carriers and surface conductivity in Bi foils that can be used for real applications in microelectronic components.


Bismuth foils, topological insulators, melt spinning method, cryothermal treatment.

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