1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
3Beijing Academy of Quantum Information Sciences, Beijing 100193, China
Adv. Mater. Lett., 2021, 12 (4), 21041616
DOI: 10.5185/amlett.2021.041616
Publication Date (Web): Feb 01, 2021
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E-mail: kywang@semi.ac.cn
Photodetectors based on two-dimensional (2D) materials and their heterostructures have been attracting immense research interests due to their excellent device performances, such as ultrahigh photoresponsivity, ultrafast and broadband photodetection, polarized sensitivity, flexibility, and Complementary Metal-Oxide-Semiconductor (CMOS) compatibility. Here, we firstly compare the device performance of several photodetectors based on Schottky junctions and p-n junctions, such as photoresponsivity and response time. Then, we provide an overview of the recent progress on 2D material-based photodetectors, emerging strategies to improve device performances by structure optimization and bandgap engineering as well. Finally, we discuss the challenges and perspectives on the exploration of 2D materials and their heterostructures for future application in electronics and optoelectronics.
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