Coulomb Drag of Electron-Electron Interactions in GaAs Bilayer with a Non Homogeneous Dielectric Background

Sharad Kumar Upadhyay*, L. K. Saini

Applied Physics Department, Sardar Vallabhbhai National Institute of Technology, Surat 395007, Gujarat, India

Adv. Mater. Lett., 2020, 11 (7), 20071539

DOI: 10.5185/amlett.2020.071539

Publication Date (Web): Jun 27, 2020

E-mail: sharadupadhyay1992@gmail.com

Abstract


Motivated by recent studies in multilayer system of dielectric background, we analytically studied the coulomb drag effect in hetero-junction of GaAs system, which consist a non-homogeneous dielectric background. By considering the weak interaction in static case, the effective dielectric function is evaluated by using Random Phase Approximation (RPA) method as RPA is a reliable study for high density regime. The effective coulomb interaction cause of electron-electron interaction in the Boltzmann regime and at low temperature limit is considered. Dependency of layer separation is effectively described by local form factor has been taken into account in effective dielectric function, the local form factor is obtained from the solution of the Poisson equation of a three-layer dielectric medium with GaAs sheets. Drag resistivity is measured numerically and analytically, where temperature and density dependence are investigated and compared to 2DEG-2DEG double-layer structures theoretically and experimentally at very low temperature.

Keywords

Fermi-liquid regime, non-homogeneous system, dielectric background, RPA method.

Upcoming Congress

Knowledge Experience at Sea TM