Oxygen vacancy filament-based resistive switching in Hf0.5Zr0.5O2 thin films for non-volatile memory

Mark Kracklauer1, 2, Fabian Ambriz-Vargas1, Gitanjali Kolhatkar1, Bernhard Huber1, 2, Christina Schindler2, Andreas Ruediger1*

1Institut Nationale de la Recherche Scientifique, Centre Énergie, Matériaux, Télécommunications, 1650 Boulevard Lionel-Boulet, Varennes, Québec, J3X 1S2, Canada

2Munich University of Applied Sciences, Department of Applied Sciences and Mechatronics, Lothstrasse 34, 80335 Munich, Germany

DOI: 10.5185/amlett.2019.2225

Publication Date (Web): Jan 10, 2019

E-mail: ruediger@emt.inrs.ca

Abstract

The continued evolution of electronic devices relies on the development of new semiconductor memory technology. Given the high compatibility of the Hf0.5Zr0.5O2 thin films with the CMOS technology, we investigate the charge transport mechanisms that occur in a relative thick Hf0.5Zr0.5O2 thin film (4 to 6 nm-thick) when subjected to electrical stresses. To that end we fabricate Hf0.5Zr0.5O2 heterostructures with a Pt tip as the top electrode and TiN and Pt as bottom electrode by radio-frequency magnetron sputtering. After analyzing the surface morphology of the as-received and as-deposited films by atomic force microscopy, the transfer of the desired chemical stoichiometry from the sputtering target to the substrate surface is studied by Raman spectroscopy. The ferroelectricity of the Hf0.5Zr0.5O2 thin films is confirmed by piezoresponse force microscopy measurements, and a retention of 22 h is obtained, attesting to the non-volatility of the samples. Nano-scale electrical measurements reveal the presence of resistive switching, where the low resistance state (ON state) in both Pt-tip/Hf0.5Zr0.5O2/TiN and Pt-tip/Hf0.5Zr0.5O2/Pt heterostructures can be created by the formation of a conductive filament based on oxygen vacancies.

Keywords

Electrical charge transport mechanism, Thin films, CMOS compatible, Nanoscale characterization.

Current Issue

Intelligent healthcare for future medicine


Review of nanoscale layered transition metal chalcogenide superconductors


Evaluation of NSAIDs antioxidant activity on lipid peroxidation in splenocyte membranes


Morphological, structural, thermal and degradation properties of polylactic acid-waxy maize starch nanocrystals based nanocomposites prepared by melt processing


Influence of surfactant on the patterning behavior of nanosilver within polyacrylamide nanogels


Cell study of the biomimetic modifications on a CoCrMo alloy for biomedical applications


SPIONs and curcumin co-encapsulated mixed micelles based nanoformulation for biomedical applications


Fabrication of Y2O3 coatings by cold-spray


Triclinic LiVPO4F/C cathode for aqueous rechargeable lithium-ion batteries


PRAP-CVD: Up-scalable process for the deposition of PEDOT thin films


Effect of storage time, plasticizer formulation and extrusion parameters on the performance of thermoplastic starch films


Effect of silver nanoparticles on the ammonia gas sensing behavior in diphenylamine based conjugated polymer


Study the possibility of using sisal fibres in building applications


Upcoming Congress

Knowledge Experience at Sea TM