Enhanced gettering of gold at end-of-range defects in high energy ion implanted silicon

Satyabrata Mohapatra*

School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, New Delhi 110078, India

Adv. Mater. Lett., 2017, 8 (10), pp 999-1003

DOI: 10.5185/amlett.2017.1648

Publication Date (Web): Jul 22, 2017

E-mail: smiuac@gmail.com


We report on the gettering behavior of Au at end-of-range (EOR) defects in float-zone grown Si(111), implanted with 1.5 MeV Au2+ ions at room temperature. The effects of implantation dose and annealing temperature on the thermal evolution of gettering behavior of EOR defects have been investigated using Rutherford backscattering spectrometry, while the microstructural evolution of Au implanted Si(111) has been studied using cross-sectional transmission electron microscopy combined with high resolution transmission electron microscopy. The gettering efficiency of EOR defects, comprising of dislocation loops, has been found to increase with increase in implantation dose up to 1.2 x 1015 ions cm-2, beyond which it was found to saturate at about 5 x 1014 atoms cm-2 for annealing at 850oC. We have observed that the gettering efficiency of the EOR defects for Au increased with increase in annealing temperature and reached 9 x 1014 atoms cm-2 for annealing at 950oC. The observed enhanced gettering efficiency of EOR defects is very promising for gettering applications in Si devices. 


Ion implantation, defects, gettering, Au, Si.

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