1GREMI CNRS-Université d’Orléans, 14 Rue d’Issoudun, Orléans, 45067, France
2Aix-Marseille Université, CNRS, IM2NP-UMR 6242, Saint Jérome Case 142, Marseille, 13397, France
3Aix-Marseille Université, CNRS, CINaM-UMR 7325, Luminy Case 913, Marseille, 13288, France
Adv. Mater. Lett., 2017, 8 (5), pp 600-604
DOI: 10.5185/amlett.2017.6908
Publication Date (Web): Apr 04, 2017
Copyright © IAAM-VBRI Press
E-mail: omar.abbes@univ-orleans.fr
The Mn-Ge binary system is a potential candidate to the fabrication of Spintronic devices. However, the understanding of the contribution of each possible Mn-Ge phase is crucial. In this work, the reaction between 50 nm thick Mn film and amorphous Ge substrate was studied via in-situ XRD. These experiments lead to the identification of the Mn-germanides formed during the reaction, with structural and magnetic confirmation. Besides, a sequence of germanides formation is studied and proposed.
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