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Ba-ZnS Passivation Layer For Improved Performance Of Quantum Dot Sensitized Solar Cells

Deepti R. Kulkarni, Narasimha H. Ayachit, Raviraj M. Kulkarni

Volume 3, Issue 3, Page 181-182, Year 2018 | DOI: 10.5185/amp.2018/017

Keywords: TiO2, ZnS, passivation layer, solar cells, quantum dot

Abstract: We report an inexpensive TiO2 based quantum dot solar cell (QDSSC) with improved power conversion efficiency prepared by simple techniques. Barium doped zinc sulfide has been successfully deposited on cadmium sulfide quantum dots (QDs) by simple successive ion layer adsorption and reaction (SILAR) technique. The Barium doped zinc sulfide is utilized as a passivation layer in the QDSSC, which helped in better charge separation. The copper sulfide (Cu2S) and reduced graphene oxide deposited on FTO was used as a counter electrode. The developed QDSSC showed superior performance when tested with AM 1.5 solar simulator using sulfide/Polysulfide electrolyte. The photoconversion efficiency of FTO/TiO2/CdS/BaZnS/Cu2S-Graphene oxide  is better than that  of FTO/TiO2 /CdS/ZnS/Cu2S-Reduced Graphene oxide. Copyright © 2018 VBRI Press.

Advanced Materials Proceedings

The official journal of the International Association of Advanced Materials (IAAM)