Cover Page November-2018-Advanced Materials Letters

ISSN- 0976-3961

Advanced Materials Letters

Volume 9, Issue 11, Pages 811-815, November 2018
About Cover

Cover page describe the Typical fracture surface of nuclear graphite blocks after irradiation (cracks occur during reactor operation). This picture Summarize the Fractographic studies of GR-280 nuclear graphite after irradiation up to neutron fluence above the turnaround dose (with a decrease in of the mechanical properties to the values close to the initial one after primary radiation-induced increase) showed along with the presence of transcrystalline fracture, appearance of intercrystalline fracture regions along the “filler-binder” type boundaries.

Effect of sulfurization temperature on optical and compositional properties of sputtered Zn(O,S) thin films

K.S. Gour1,2, A.K. Yadav1,2, Rahul Kumar1,2, J.S. Tawale2 and V.N. Singh1,2,*

1Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

2Indian Reference Materials (BND) Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012, India

Adv. Mater. Lett., 2018, 9 (11), pp 811-815

DOI: 10.5185/amlett.2018.2125

Publication Date (Web): Jul 25, 2018



Zinc oxysulfide or Zn(O,S) is emerging as an alternate n-type buffer layer for kesterite, chalcogenides and CdTe based thin film solar cell due to it is being made from non-toxic elements and tunable bandgap, its suitable optical and electrical properties required for a buffer layer. Generally, buffer layers of these solar cells are deposited using chemical bath deposition (CBD) techniques, but these require breaking of vacuum and again inserting the sample in vacuum during solar cell fabrication, which is not economical and is cumbersome. Sputtering is considered to be industrial process and therefore, here we have deposited Zn(O,S) thin film by sputtering technique and effect of sulfurization temperature on bandgap and composition of Zn(O,S) films have been studied. The bandgap of deposited films changed from 3.36 eV to 3.15 eV by changing the sulfurization temperatures. By changing the sulfurization temperature, the composition of films also changed. Crystallite size (D) of Zn(O,S) films increased from 12.1 nm to 22.3 nm by varying the sulfur content for samples S1-S4, respectively. Optical, morphological, compositional and structural properties have been studied using UV-Vis-NIR spectroscopy, Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS) and X-ray diffractometer (XRD), respectively. 


Zn(O,S) films, Cd-free buffer layer, bandgap, sputtering, sulfurization/annealing